Turkey's global strategy: introduction: the sources of Turkish grand strategy - ‘strategic depth’ and ‘zero-problems’ in context

The dramatic changes in Turkish foreign policy and strategy in its regional and international relations in the fi rst decade of the new century stands in sharp contrast with that of its immediate past. After the end of the Cold War, Turkey was a prickly power in a tough neighbourhood, one that included two major zones of instability, the Balkans and the Middle East. On three separate occasions, Turkey came to the brink of war with its neighbours: Armenia in 1992, Greece in 1996 and Syria in 1998. Regular military incursions were launched into Northern Iraq; in the Aegean, continuous tactical military provocations between the Greek and Turkish air force took place. Little movement was evident with regard to Cyprus and at one point Turkey even threatened to annex the northern part of the island. Relations with post-Cold War Russia were tentative and burdened by a long history of tension and conflict. Relations with Iran were soured by the Kurdish conflict and political Islam. Turkey’s overall approach to its neighbours was characterised by confrontation, mistrust, and the use of threats and force. Yet, despite tensions over domestic issues such as human rights, widespread use of torture, and the situation of the Kurdish minority, Turkey remained a strong transatlantic partner

Minority carrier diffusion lengths and mobilities in low-doped n-InGaAs for focal plane array applications

The hole diffusion length in n-InGaAs is extracted for two samples of different doping concentrations using a set of long and thin diffused junction diodes separated by various distances on the order of the diffusion length. The methodology is described, including the ensuing analysis which yields diffusion lengths between 70 - 85 um at room temperature for doping concentrations in the range of 5 - 9 x 10^15 cm-3. The analysis also provides insight into the minority carrier mobility which is a parameter not commonly reported in the literature. Hole mobilities on the order of 500 - 750 cm2/Vs are reported for the aforementioned doping range, which are comparable albeit longer than the majority hole mobility for the same doping magnitude in p-InGaAs. A radiative recombination coefficient of (0.5-0.2)x10^-10 cm^-3s^-1 is also extracted from the ensuing analysis for an InGaAs thickness of 2.7 um. Preliminary evidence is also given for both heavy and light hole diffusion. The dark current of InP/InGaAs p-i-n photodetectors with 25 and 15 um pitches are then calibrated to device simulations and correlated to the extracted diffusion lengths and doping concentrations. An effective Shockley-Read-Hall lifetime of between 90-200 us provides the best fit to the dark current of these structures.Comment: 9 pages, 5 figure

Heavy and light hole minority carrier transport properties in low-doped n-InGaAs lattice matched to InP

Minority carrier diffusion lengths in low-doped n-InGaAs using InP/InGaAs double-heterostructures are reported using a simple electrical technique. The contributions from heavy and light holes are also extracted using this methodology, including minority carrier mobilities and lifetimes. Heavy holes are shown to initially dominate the transport due to their higher valence band density of states, but at large diffusion distances, the light holes begin to dominate due to their larger diffusion length. It is found that heavy holes have a diffusion length of 54.5 +/- 0.6 microns for an n-InGaAs doping of 8.4 x 10^15 cm-3 at room temperature, whereas light holes have a diffusion length in excess of 140 microns. Heavy holes demonstrate a mobility of 692 +/- 63 cm2/Vs and a lifetime of 1.7 +/- 0.2 microsec, whereas light holes demonstrate a mobility of 6200 +/- 960 cm-2/Vs and a slightly longer lifetime of 2.6 +/- 1.0 microsec. The presented method, which is limited to low injection conditions, is capable of accurately resolving minority carrier transport properties.Comment: 16 pages, 13 figure

Evaluation of radar imagery of highly faulted volcanic terrain in southeast Oregon

Aerial radar imagery of highly faulted volcanic terrain in southeast Orego

Ultraviolet solid state spectroscopy in the spectral region 3000 - 300 A Final report, 1 Oct. 1960 - 1 Dec. 1969

Summary of research in solid state spectroscopy on variety of material

Optimal Control Of Surface Shape

Controlling the shapes of surfaces provides a novel way to direct self-assembly of colloidal particles on those surfaces and may be useful for material design. This motivates the investigation of an optimal control problem for surface shape in this paper. Specifically, we consider an objective (tracking) functional for surface shape with the prescribed mean curvature equation in graph form as a state constraint. The control variable is the prescribed curvature. We prove existence of an optimal control, and using improved regularity estimates, we show sufficient differentiability to make sense of the first order optimality conditions. This allows us to rigorously compute the gradient of the objective functional for both the continuous and discrete (finite element) formulations of the problem. Moreover, we provide error estimates for the state variable and adjoint state. Numerical results are shown to illustrate the minimizers and optimal controls on different domains

Space environmental work simulator Patent

Space environmental work simulator with portions of space suit mounted to vacuum chamber wal